ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 0104-100 100 watts, 28 volts, class ab defcom 100 - 400 mhz general description the 0104-100 is a double input matched common emitter broadband transistor specifically intended for use in the 100-400 mhz frequency band. it may be operated in class ab or c. gold metallization and silicon diffused resistors ensure ruggedness and high reliability. case outline 55jt, style 2 absolute maximum ratings maximum power dissipation @ 25 c 270 watts o maximum voltage and current bvces collector to emiter voltage 60 volts bvebo emitter to base voltage 4.0 volts ic collector current 16 a maximum temperatures storage temperature - 65 to +150 c o operating junction temperature +150 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power output power input power gain efficiency load mismatch tolerance f = 400 mhz vcc = 28 volts 100 7.0 8.0 50 20 5:1 watts watts db % bvebo 1 bvces 1 bvceo 1 cob 1 h fe 1 q jc emitter to base breakdown collector to emitter breakdown collector to emitter breakdown output capacitance dc - current gain thermal resistance ie = 5 ma ic = 100 ma ie = 100 ma vcb = 28 v, f = 1 mhz vce = 5 v, ic = 1 a 4.0 60 32 20 70 0.65 volts volts volts pf c/w o note 1: per side issue august 1996
0104-100
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